Fairchild 215 B

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The Fairchild 215 B is a popular power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power applications. It operates in a drain-source voltage range of up to 600 V and a drain current of up to 1,200 A, making it suitable for use in a wide variety of power control circuitries such as AC motor drives, solar power conditioning, and uninterruptible power supplies (UPS).The device incorporates several performance-enhancing features, including a low drain-source on-resistance (RDS(ON)) of 0.0007 Ω at a gate-source voltage (VGS) of 20 V, a high ratio of drain current to gate charge (ID/QGD), low parasitic capacitances, and a low threshold voltage (VGS(TH)). It also has a high input resistance, low forward body diode resistance, and low output capacitance, making it particularly well-suited for switching applications.The Fairchild 215 B is packaged in a TO-247 land pin package, which optimizes PCB real estate utilization and minimizes power loss due to the lower thermal resistance between die and heat sink. The device is also available in other package types such as D2PAK, DPAK, and TO-3P 2-lead power tab leads.Overall, the Fairchild 215 B is a reliable and versatile power MOSFET that delivers high power, low RDS(ON), low capacitance, and optimized performance for a wide variety of high-power applications.